Press Release: Understanding Stress Impacts on 7nm FinFET Devices
In the realm of semiconductor technology, the performance of transistors is greatly influenced by their design and fabrication processes. A recent whitepaper explores how mechanical stress, encountered during the fabrication of FinFET devices, affects their electrical characteristics specifically in 7nm silicon technology.
The study highlights the presence of Local Layout Effects (LLEs) which arise from variations in device layout and pattern configurations. These variations can significantly impact carrier mobility, crucial for effective device operation. The researchers focused on two primary sources of stress modulation: the active region isolation, known as the Diffusion Break, and the Metal Gate extension beyond the transistor fins.
To conduct their analysis, the team developed a three-dimensional Technology Computer-Aided Design (TCAD) model of a FinFET device, calibrated using electrical data from foundry-manufactured silicon wafers. This model allowed for simulations of mechanical stress in transistors with different design features, particularly varying configurations of Diffusion Breaks and Gate Cuts.
The findings revealed a strong correlation between simulated stress distributions and measured electrical characteristics for both PMOS and NMOS FinFET transistors. This research underscores that layout sensitivities in transistor designs can primarily be attributed to mechanical stress modulation.
The insights from this study hold significant implications for semiconductor design. The modeled predictions can assist engineers in Design-Technology Co-optimization, the development of design rules, Process Design Kits (PDKs), and process enhancements aimed at optimizing performance while minimizing variability.
For more detailed insights, the full whitepaper is available for further reading.
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